Flying Bull (Ningbo) Electronic Technology Co., Ltd.

ʻO ka ʻenekini kaomi ʻenekona 2CP3-68 1946725 no Carter excavator

ʻO ka wehewehe pōkole:


  • OE:1946725
  • Laulā ana:0-600bar
  • Ka pololei ana ana:1%fs
  • Wahi o ka noi:Hoʻohana ʻia ma Carter
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    ʻO kahi ala no ka hoʻomākaukau ʻana i kahi sensor kaomi, i hōʻike ʻia me ka loaʻa ʻana o nā pae aʻe:

    S1, hāʻawi i kahi wafer me ka ʻili hope a me ka ʻili mua; Ka hana ʻana i kahi ʻāpana piezoresistive a me kahi wahi hoʻopili i hoʻopaʻa ʻia ma ka ʻili mua o ka wafer; Ka hana ʻana i ka lua hohonu ma ke kālai ʻana i ka ʻili hope o ka wafer;

    S2, hoʻopaʻa i kahi pepa kākoʻo ma ke kua o ka wafer;

    S3, e hana ana i na puka kepau a me na uwea metala ma ka aoao mua o ka wafer, a me ka hookui ana i na kaula piezoresistive e hana i alahaka Wheatstone;

    S4, waiho a hoʻokumu i kahi papa passivation ma ka ʻaoʻao mua o ka wafer, a wehe i kahi ʻāpana o ka papa passivation e hana i kahi ʻāpana metala. 2. ʻO ke ʻano hana o ka mea ʻike kaomi e like me ke koi 1, kahi i loaʻa ai iā S1 nā ʻanuʻu penei: S11: hāʻawi i kahi wafer me kahi ʻili hope a me kahi ʻili mua, a me ka wehewehe ʻana i ka mānoanoa o kahi kiʻi ʻoniʻoni koʻikoʻi ma ka wafer; S12: hoʻohana ʻia ka hoʻokomo ʻana i ka ion ma ka ʻaoʻao mua o ka wafer, hana ʻia nā ʻāpana piezoresistive e kahi kaʻina diffusion wela kiʻekiʻe, a ua hoʻopili nui ʻia nā wahi pili; S13: waiho a hoʻokumu i kahi papa pale ma ka ʻili mua o ka wafer; S14: hoʻopaʻa ʻia a hoʻokumu i kahi lua hohonu kaomi ma ke kua o ka wafer e hana i kahi kiʻiʻoniʻoni koʻikoʻi. 3. ʻO ke ʻano o ka hana ʻana o ka sensor kaomi e like me ke koi 1, kahi o ka wafer SOI.

     

    I ka makahiki 1962, ʻo Tufte et al. ua hana ʻo ia i kahi mea ʻike piezoresistive pressure me nā ʻāpana piezoresistive silicon diffused a me ke ʻano kiʻi kiʻiʻoniʻoni no ka manawa mua, a hoʻomaka i ka noiʻi ʻana i ka sensor piezoresistive pressure sensor. I ka hopena o nā makahiki 1960 a me nā makahiki 1970, ʻo ke ʻano o nā ʻenehana ʻekolu, ʻo ia hoʻi, silicon anisotropic etching technology, ion implantation technology and anodic bonding technology, ua lawe mai i nā loli nui i ka sensor kaomi, kahi i hana nui i ka hoʻomaikaʻi ʻana i ka hana o ka mīkini paʻi. . Mai ka makahiki 1980, me ka hoʻomohala hou ʻana o ka ʻenehana micromachining, e like me ka anisotropic etching, lithography, diffusion doping, implantation ion, hoʻopaʻa a me ka uhi ʻana, ua hoʻemi mau ʻia ka nui o ka sensor kaomi, ua hoʻomaikaʻi ʻia ka naʻau, a ua kiʻekiʻe ka hopena. maikaʻi ka hana. I ka manawa like, ʻo ka hoʻomohala ʻana a me ka hoʻohana ʻana i ka ʻenehana micromachining hou e hoʻomalu pono i ka mānoanoa kiʻiʻoniʻoni.

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